| Sign In | Join Free | My burrillandco.com |
|
| Ask Lasest Price | |
| Brand Name : | TOSHIBA |
| Model Number : | GT20J101 |
| Price : | Negotiation |
| Payment Terms : | T/T, Western Union , ESCROW |
| Supply Ability : | 10000PCS |
| Delivery Time : | STOCK |
GT20J101 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT
High Power Switching Applications
• The 3rd Generation • Enhancement-Mode
• High Speed: tf = 0.30 µs (max)
• Low Saturation Voltage: VCE (sat) = 2.7 V (max)
| Characteristic | Symbol | Rating | Unit |
| Collector-emitter voltage | VCES | 600 | V |
| Gate-emitter voltage | VGES | +-20 | V |
| Collector current DC | IC | 20 | A |
| Collector current 1 ms | ICP | 40 | A |
| Collector power dissipation (Tc = 25°C) | PC | 130 | W |
| Junction temperature | Tj | 150 | °C |
| Storage temperature range | Tstg | −55~150 | °C |

Deli electronics tehcnology co ltd
www.icmemorychip.com
Email:sales3@deli-ic.com
Skype:hkdeli881
TEL:86-755-82539981
|
|